Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88 SI1967DH-T1-GE3
- RS庫存編號:
- 812-3108
- 製造零件編號:
- SI1967DH-T1-GE3
- 製造商:
- Vishay
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TWD745.00
(不含稅)
TWD782.00
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 150 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 50 - 700 | TWD14.90 | TWD745.00 |
| 750 - 1450 | TWD14.60 | TWD730.00 |
| 1500 + | TWD14.40 | TWD720.00 |
* 參考價格
- RS庫存編號:
- 812-3108
- 製造零件編號:
- SI1967DH-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 790mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.6nC | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 2.2mm | |
| Width | 1.35mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 790mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.6nC | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs 8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 2.2mm | ||
Width 1.35mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay TrenchFET Series Power MOSFET, 20V Maximum Drain Source Voltage, 1.1A Maximum Continuous Drain Current - SI1967DH-T1-GE3
This power MOSFET is a surface-mounted P-channel transistor intended for low-voltage switching and analogue functions in compact electronic assemblies. It operates as an enhancement-mode device and is designed to be integrated where isolated transistor configuration and modest continuous current handling are required. The component is supplied in a small SC-88 package suitable for dense layouts.
Features and Benefits:
• 20V drain-source rating enables low-voltage switching
• 1.1A continuous drain current supports steady loads
• 790mΩ Rds(on) minimises conduction losses
• 2.6nC typical gate charge allows faster gate transitions
• 1.25W power dissipation copes with moderate thermal stress
• 1.1A continuous drain current supports steady loads
• 790mΩ Rds(on) minimises conduction losses
• 2.6nC typical gate charge allows faster gate transitions
• 1.25W power dissipation copes with moderate thermal stress
Applications
• Suitable for battery-protection circuits in portable equipment
• Ideal for load switching in compact power modules
• Used with level-shifting stages in analogue front-ends
• Can be used for dual-channel switching in tight PCB spaces
• Ideal for load switching in compact power modules
• Used with level-shifting stages in analogue front-ends
• Can be used for dual-channel switching in tight PCB spaces
What mounting style is required for assembly?
It is intended for surface-mount assembly on standard solderable pads compatible with SC-88 footprints.
How many active transistor elements does it contain?
The device contains two elements per chip, enabling dual-function or complementary routing in designs.
What gate voltage limits should designers observe?
The maximum gate-to-source voltage rating is 8V, which must not be exceeded to avoid device stress.
What temperature range can it withstand during operation?
It is specified to operate between -55°C and 150°C, accommodating wide environmental conditions.
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