Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3
- RS庫存編號:
- 787-9055
- 製造零件編號:
- SI1029X-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD266.00
(不含稅)
TWD279.20
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,560 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 140 | TWD13.30 | TWD266.00 |
| 160 - 740 | TWD12.80 | TWD256.00 |
| 760 - 1480 | TWD12.30 | TWD246.00 |
| 1500 + | TWD12.10 | TWD242.00 |
* 參考價格
- RS庫存編號:
- 787-9055
- 製造零件編號:
- SI1029X-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 300mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-89-6 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 750nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250mW | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 0.6mm | |
| Length | 1.7mm | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 300mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-89-6 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 750nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250mW | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 0.6mm | ||
Length 1.7mm | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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