Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89 SI1034CX-T1-GE3

RS庫存編號:: 180-7879
製造零件編號:: SI1034CX-T1-GE3
製造商:: Vishay

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89 SI1034CX-T1-GE3

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可享批量折扣

小計（1 包，共 50 件）*

TWD345.00

(不含稅)

TWD362.00

添加 200 件件可免費送貨

下方訂單 TWD1,300.00（不含稅）成本 TWD500.00。

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單位	每單位	每包*
50 - 700	TWD6.90	TWD345.00
750 - 1450	TWD6.70	TWD335.00
1500 +	TWD6.60	TWD330.00

* 參考價格

RS庫存編號:: 180-7879
製造零件編號:: SI1034CX-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	0.5A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SC-89
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.396Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	220mW
	Typical Gate Charge Qg @ Vgs	1.3nC
	Maximum Gate Source Voltage Vgs	8 V
	Minimum Operating Temperature	-55°C
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Length	1.7mm
	Standards/Approvals	No
	Width	1.2 mm
	Height	0.6mm
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 0.5A
	Maximum Drain Source Voltage Vds 20V
	Package Type SC-89
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.396Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 220mW
	Typical Gate Charge Qg @ Vgs 1.3nC
	Maximum Gate Source Voltage Vgs 8 V
	Minimum Operating Temperature -55°C
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Length 1.7mm
	Standards/Approvals No
	Width 1.2 mm
	Height 0.6mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

Vishay MOSFET

The Vishay surface mount dual N-channel MOSFET has a drain-source voltage of 20V. It has drain-source resistance of 396mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 220mW. The MOSFET has continuous drain current of 610mA. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Gate source ESD protected: 1000V

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Battery powered devices

• Drivers: relays, solenoids, lamps, hammers, displays, memories

• Load/power switching for portable devices

• Power supply converter circuits

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested