Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89

RS庫存編號:: 180-7262
製造零件編號:: SI1034CX-T1-GE3
製造商:: Vishay

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89

可享批量折扣

小計（1 卷，共 3000 件）*

TWD13,800.00

(不含稅)

TWD14,490.00

訂單超過 $1,300.00 免費送貨

有庫存

加上 6,000 件從 2026年2月23日起發貨

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單位	每單位	每卷*
3000 - 12000	TWD4.60	TWD13,800.00
15000 +	TWD4.50	TWD13,500.00

* 參考價格

RS庫存編號:: 180-7262
製造零件編號:: SI1034CX-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	0.5A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	SC-89
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.396Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	8 V
	Typical Gate Charge Qg @ Vgs	1.3nC
	Maximum Power Dissipation Pd	220mW
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Standards/Approvals	No
	Length	1.7mm
	Width	1.2 mm
	Height	0.6mm
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 0.5A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type SC-89
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.396Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 8 V
	Typical Gate Charge Qg @ Vgs 1.3nC
	Maximum Power Dissipation Pd 220mW
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Standards/Approvals No
	Length 1.7mm
	Width 1.2 mm
	Height 0.6mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

Vishay MOSFET

The Vishay surface mount dual N-channel MOSFET has a drain-source voltage of 20V. It has drain-source resistance of 396mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 220mW. The MOSFET has continuous drain current of 610mA. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Gate source ESD protected: 1000V

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Battery powered devices

• Drivers: relays, solenoids, lamps, hammers, displays, memories

• Load/power switching for portable devices

• Power supply converter circuits

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested