Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89
- RS庫存編號:
- 180-7262
- 製造零件編號:
- SI1034CX-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD15,300.00
(不含稅)
TWD16,080.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD5.10 | TWD15,300.00 |
| 15000 + | TWD4.90 | TWD14,700.00 |
* 參考價格
- RS庫存編號:
- 180-7262
- 製造零件編號:
- SI1034CX-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-89 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.396Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 220mW | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Height | 0.6mm | |
| Length | 1.7mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-89 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.396Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 220mW | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Height 0.6mm | ||
Length 1.7mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Vishay MOSFET
The Vishay surface mount dual N-channel MOSFET has a drain-source voltage of 20V. It has drain-source resistance of 396mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 220mW. The MOSFET has continuous drain current of 610mA. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Gate source ESD protected: 1000V
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Battery powered devices
• Drivers: relays, solenoids, lamps, hammers, displays, memories
• Load/power switching for portable devices
• Power supply converter circuits
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
相關連結
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