Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3

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包裝方式:
RS庫存編號:
228-2835
製造零件編號:
SIA938DJT-T1-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

20V

Package Type

SC-70

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

7.8W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.5nC

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Vishay TrenchFET Series MOSFET, 20V Maximum Drain Source Voltage, 4.5A Maximum Continuous Drain Current - SIA938DJT-T1-GE3


This MOSFET is a Compact, surface-mount dual N-channel transistor designed for switching and power-management duties in electronic systems. It operates at low voltage levels and is suitable for Compact assemblies where board space is limited. The device accommodates moderate continuous currents and supports operation across a wide temperature span for industrial and commercial electronics environments.

Features and Benefits:


• 20V drain rating enables low-voltage system switching
• 4.5A continuous drain current supports moderate load currents
• 21.5mΩ low Rds(on) reduces conduction losses
• 3.5nC typical gate charge minimises switching energy
• 12V maximum gate-source protection simplifies gate drive
• 7.8W power dissipation allows thermal headroom in Compact layouts

Applications


• Suitable for battery-powered motor drivers and controllers
• Ideal for DC-DC converters in embedded systems
• Used for load switching in automation control modules
• Can be used for power distribution in portable electronics

What thermal range can it tolerate during operation?


It is rated to function between -55°C and 150°C, supporting cold-start and high-temperature operation.

How is the device packaged for PCB assembly?


It comes in a Compact SC-70 surface-mount package with an eight-pin count for dual-element placement.

Can this transistor be used in multi-transistor chip configurations?


Yes, it contains two transistor elements on a single die configured as a dual transistor, simplifying layout for paired switching.

What gate-drive considerations apply for robust operation?


The maximum permissible gate-to-source voltage is 12V

designs should limit drive voltage accordingly to avoid exceeding this rating.

How much power can the device safely dissipate on a PCB?


The maximum power dissipation is specified as 7.8W, which must be managed via PCB thermal design and appropriate copper area.

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