Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3

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包裝方式:
RS庫存編號:
228-2835
製造零件編號:
SIA938DJT-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

20V

Package Type

SC-70

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

7.8W

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Vishay TrenchFET Series MOSFET, 20V Maximum Drain Source Voltage, 4.5A Maximum Continuous Drain Current - SIA938DJT-T1-GE3


This MOSFET is a compact dual N-channel enhancement-mode transistor designed for surface-mount power management. It offers a low-voltage switching solution suitable for dense electronic assemblies and is intended for applications requiring dual-channel control in an 8-pin SC-70 package. The device handles moderate continuous currents and dissipates limited power while operating across a wide temperature span.

Features and Benefits:


• Low on-resistance of 21.5 mΩ reduces conduction losses
• Maximum drain voltage of 20V supports low-voltage systems
• Continuous drain current rating of 4.5A enables moderate loads
• Gate charge of 3.5 nC allows faster switching and lower drive energy
• Power dissipation capability of 7.8W aids thermal budgeting
• Operating range -55 to 150 °C permits high-temperature deployment

Applications


• Suitable for battery-powered DC distribution stages
• Ideal for synchronous rectification in power converters
• Used for dual-channel load switching on compact boards
• Can be used for motor-drive low-voltage stages
• Suited to thermally challenged environments requiring high-temperature parts

What mounting method does it support on a PCB?


It is supplied for surface-mount assembly in an 8-pin SC-70 package, facilitating automated soldering and compact layout.

How does the device handle gate-drive limits?


The gate-source voltage must not exceed 12V to prevent gate-dielectric stress during operation.

Is the transistor suitable for complementary configurations?


It is a dual N-channel arrangement with two elements per die, allowing paired switch topologies where two N-type devices are required.

What thermal extremes can it tolerate in use?


The device is rated to operate down to -55 °C and up to 150 °C, permitting use across a broad thermal envelope.

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