Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3
- RS庫存編號:
- 228-2835
- 製造零件編號:
- SIA938DJT-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD415.00
(不含稅)
TWD435.75
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 5,975 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD16.60 | TWD415.00 |
| 50 - 75 | TWD16.20 | TWD405.00 |
| 100 - 225 | TWD15.80 | TWD395.00 |
| 250 - 975 | TWD15.40 | TWD385.00 |
| 1000 + | TWD15.00 | TWD375.00 |
* 參考價格
- RS庫存編號:
- 228-2835
- 製造零件編號:
- SIA938DJT-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 7.8W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 7.8W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Dual N-Channel MOSFET provides exceptional versatility for power management design.
Very low RDS(on) and excellent RDS x Qg
Figure-of-Merit (FOM) in an ultra compact
package footprint
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