製造零件編號

Vishay Dual Plus Integrated Schottky 2 Type P-Channel MOSFET, 4.5 A, 30 V, 6-Pin PowerPAK SC-70-6L SIA817EDJ-T1-GE3

RS庫存編號:: 180-7827
製造零件編號:: SIA817EDJ-T1-GE3
製造商:: Vishay

Vishay Dual Plus Integrated Schottky 2 Type P-Channel MOSFET, 4.5 A, 30 V, 6-Pin PowerPAK SC-70-6L SIA817EDJ-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 25 件）*

TWD220.00

(不含稅)

TWD231.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月15日發貨

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單位	每單位	每包*
25 - 725	TWD8.80	TWD220.00
750 - 1475	TWD8.60	TWD215.00
1500 +	TWD8.40	TWD210.00

* 參考價格

RS庫存編號:: 180-7827
製造零件編號:: SIA817EDJ-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PowerPAK SC-70-6L
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.065Ω
	Typical Gate Charge Qg @ Vgs	6.6nC
	Maximum Power Dissipation Pd	6.5W
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.56V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual Plus Integrated Schottky
	Height	0.75mm
	Width	2.05 mm
	Standards/Approvals	No
	Length	2.05mm
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 30V
	Package Type PowerPAK SC-70-6L
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.065Ω
	Typical Gate Charge Qg @ Vgs 6.6nC
	Maximum Power Dissipation Pd 6.5W
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.56V
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual Plus Integrated Schottky
	Height 0.75mm
	Width 2.05 mm
	Standards/Approvals No
	Length 2.05mm
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

The Vishay SIA817EDJ is a P-channel MOSFET with schottky diode having drain to source(Vds) voltage of -30V. It is having configuration of dual plus integrated schottky. The gate to source voltage(VGS) is 12V. It is having power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 4.5VGS. Maximum drain current -4.5A.

Little foot plus Schottky power MOSFET

Thermally enhanced Power PAK SC-70 package small footprint area low on resistance thin 0.75 mm profile

Typical ESD protection (MOSFET): 1500 V (HBM)

Vishay Dual Plus Integrated Schottky 2 Type P-Channel MOSFET, 4.5 A, 30 V, 6-Pin PowerPAK SC-70-6L SIA817EDJ-T1-GE3

訂單超過 $1,300.00 免費送貨

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