Vishay Siliconix TrenchFET Type N-Channel MOSFET, 12 A, 60 V Enhancement, 6-Pin SC-70-6L SiA106DJ-T1-GE3
- RS庫存編號:
- 178-3901
- 製造零件編號:
- SiA106DJ-T1-GE3
- 製造商:
- Vishay Siliconix
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可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD327.00
(不含稅)
TWD343.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 810 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD32.70 | TWD327.00 |
| 750 - 1490 | TWD31.70 | TWD317.00 |
| 1500 + | TWD31.50 | TWD315.00 |
* 參考價格
- RS庫存編號:
- 178-3901
- 製造零件編號:
- SiA106DJ-T1-GE3
- 製造商:
- Vishay Siliconix
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-70-6L | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.0185Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 19W | |
| Typical Gate Charge Qg @ Vgs | 6.9nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-70-6L | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.0185Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 19W | ||
Typical Gate Charge Qg @ Vgs 6.9nC | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
豁免
- COO (Country of Origin):
- CN
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg Figure-of-Merit (FOM)
Tuned for the lowest RDS – Qoss
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