Vishay Siliconix TrenchFET Type N-Channel MOSFET, 12 A, 60 V Enhancement, 6-Pin SC-70-6L SiA106DJ-T1-GE3
- RS庫存編號:
- 178-3901
- 製造零件編號:
- SiA106DJ-T1-GE3
- 製造商:
- Vishay Siliconix
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD212.00
(不含稅)
TWD222.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD21.20 | TWD212.00 |
| 750 - 1490 | TWD20.60 | TWD206.00 |
| 1500 + | TWD20.40 | TWD204.00 |
* 參考價格
- RS庫存編號:
- 178-3901
- 製造零件編號:
- SiA106DJ-T1-GE3
- 製造商:
- Vishay Siliconix
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-70-6L | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.0185Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 19W | |
| Typical Gate Charge Qg @ Vgs | 6.9nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-70-6L | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.0185Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 19W | ||
Typical Gate Charge Qg @ Vgs 6.9nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Automotive Standard No | ||
豁免
- COO (Country of Origin):
- CN
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg Figure-of-Merit (FOM)
Tuned for the lowest RDS – Qoss
相關連結
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 60 V Enhancement, 6-Pin SC-70-6L
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 6-Pin SC-70-6L SQA405EJ-T1_GE3
- Vishay SIA Type N-Channel MOSFET 100 V Enhancement, 7-Pin SC-70-6L SIA112LDJ-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin SC-70 SIA447DJ-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3
- Vishay Single 1 Type P-Channel MOSFET 20 V, 6-Pin PowerPAK SC-70-6L SIA437DJ-T1-GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 SiDR392DP-T1-GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212 SiS110DN-T1-GE3