Vishay SIA Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 7-Pin SC-70-6L SIA112LDJ-T1-GE3
- RS庫存編號:
- 279-9900
- 製造零件編號:
- SIA112LDJ-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD212.00
(不含稅)
TWD222.60
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 6,000 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD21.20 | TWD212.00 |
| 50 - 90 | TWD15.90 | TWD159.00 |
| 100 - 240 | TWD14.10 | TWD141.00 |
| 250 - 990 | TWD13.80 | TWD138.00 |
| 1000 + | TWD13.60 | TWD136.00 |
* 參考價格
- RS庫存編號:
- 279-9900
- 製造零件編號:
- SIA112LDJ-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SC-70-6L | |
| Series | SIA | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.119Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 15.6W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 2.05mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SC-70-6L | ||
Series SIA | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.119Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 15.6W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 2.05mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
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