Vishay SIA Type P-Channel MOSFET, 9 A, 20 V PowerPAK SC-70 SIA4265EDJ-T1-GE3
- RS庫存編號:
- 239-5367
- 製造零件編號:
- SIA4265EDJ-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 3000 件)*
TWD14,100.00
(不含稅)
TWD14,820.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD4.70 | TWD14,100.00 |
| 6000 + | TWD4.60 | TWD13,800.00 |
* 參考價格
- RS庫存編號:
- 239-5367
- 製造零件編號:
- SIA4265EDJ-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | SIA | |
| Package Type | PowerPAK SC-70 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.032Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Maximum Power Dissipation Pd | 15.6W | |
| Typical Gate Charge Qg @ Vgs | 13.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series SIA | ||
Package Type PowerPAK SC-70 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.032Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Maximum Power Dissipation Pd 15.6W | ||
Typical Gate Charge Qg @ Vgs 13.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
The Vishay P channel MOSFET has drain current of -9 A. It is used for Load switches, battery switches, charger switches
100 % Rg tested
Thermally enhanced PowerPAK® SC-70 package
Small footprint area
Low on-resistance
Typical ESD protection: 3000 V (HBM)
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