Vishay TrenchFET Type N-Channel MOSFET, 210 mA, 20 V Enhancement, 3-Pin SC-75 SI1032R-T1-GE3
- RS庫存編號:
- 787-9024
- 製造零件編號:
- SI1032R-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 組,共 20 件)*
TWD192.00
(不含稅)
TWD201.60
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 28,600 個,準備發貨
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 20 - 740 | TWD9.60 | TWD192.00 |
| 760 - 1480 | TWD9.40 | TWD188.00 |
| 1500 + | TWD9.20 | TWD184.00 |
* 參考價格
- RS庫存編號:
- 787-9024
- 製造零件編號:
- SI1032R-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 210mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 340mW | |
| Maximum Gate Source Voltage Vgs | ±6 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Length | 1.68mm | |
| Width | 0.86 mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 210mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 340mW | ||
Maximum Gate Source Voltage Vgs ±6 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Length 1.68mm | ||
Width 0.86 mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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