製造零件編號

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88

RS庫存編號:: 145-2681
製造零件編號:: SI1967DH-T1-GE3
製造商:: Vishay

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD14,400.00

(不含稅)

TWD15,120.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年9月11日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 12000	TWD4.80	TWD14,400.00
15000 +	TWD4.70	TWD14,100.00

* 參考價格

RS庫存編號:: 145-2681
製造零件編號:: SI1967DH-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	1.1A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SC-88
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	790mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.25W
	Typical Gate Charge Qg @ Vgs	2.6nC
	Maximum Gate Source Voltage Vgs	8 V
	Minimum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Maximum Operating Temperature	-55°C
	Height	1mm
	Width	1.35 mm
	Standards/Approvals	No
	Length	2.2mm
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 1.1A
	Maximum Drain Source Voltage Vds 20V
	Package Type SC-88
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 790mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.25W
	Typical Gate Charge Qg @ Vgs 2.6nC
	Maximum Gate Source Voltage Vgs 8 V
	Minimum Operating Temperature 150°C
	Transistor Configuration Isolated
	Maximum Operating Temperature -55°C
	Height 1mm
	Width 1.35 mm
	Standards/Approvals No
	Length 2.2mm
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88

訂單超過 $1,300.00 免費送貨

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