Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88
- RS庫存編號:
- 145-2681
- 製造零件編號:
- SI1967DH-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD15,900.00
(不含稅)
TWD16,680.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月02日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD5.30 | TWD15,900.00 |
| 15000 + | TWD5.20 | TWD15,600.00 |
* 參考價格
- RS庫存編號:
- 145-2681
- 製造零件編號:
- SI1967DH-T1-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 790mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Typical Gate Charge Qg @ Vgs | 2.6nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 1.25W | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2.2mm | |
| Width | 1.35mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 790mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8V | ||
Typical Gate Charge Qg @ Vgs 2.6nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 1.25W | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2.2mm | ||
Width 1.35mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay TrenchFET Series Power MOSFET, 20V Maximum Drain Source Voltage, 1.1A Maximum Continuous Drain Current - SI1967DH-T1-GE3
This power MOSFET is a P‑channel surface‑mount transistor designed for low‑voltage switching in Compact electronic systems. It operates as an enhancement‑mode device and is intended for board‑level power control where modest current handling and a small footprint are required.
Features and Benefits:
• 20V drain‑source rating enables low‑voltage system deployment • 1.1A continuous drain current supports light power switching • 790mΩ low Rds(on) reduces conduction losses during operation • 2.6nC typical gate charge permits Faster gate transitions • 1.25W power dissipation manages thermal load in small assemblies • Dual‑element isolated transistor allows paired switching arrangements
Applications
• Suitable for battery management and power rail switching in portable equipment • Ideal for load switching in industrial control modules • Used for reverse‑polarity protection in embedded systems • Can be used for signal level shifting in mixed‑voltage circuitry
What package should I plan for when designing the PCB?
The device is supplied in a 6‑pin SC‑88 SMD package that occupies a Compact footprint suitable for high‑density boards.
How does temperature affect operation limits?
The component is specified for operation between -55°C and 150°C, defining the allowable ambient and junction environments for reliable switching.
Can this component be used in automotive systems?
It is not classified to automotive standards, so suitability should be evaluated against vehicular qualification requirements before use.
What gate voltage range is permissible for control signals?
Gate drive must not exceed an 8V gate‑to‑source limit to avoid device overstress.
How many transistor elements are on the chip and what configuration are they?
The chip contains two isolated elements configured to enable paired or independent switching arrangements.
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