Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC

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RS庫存編號:
919-0297
製造零件編號:
SI4559ADY-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.3A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

72mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13nC

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

3.4W

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5mm

Width

4 mm

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual N/P-Channel MOSFET, Vishay Semiconductor


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