Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 3.1 A, 60 V Enhancement, 8-Pin SOIC
- RS庫存編號:
- 919-4198
- 製造零件編號:
- SI4948BEY-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD49,750.00
(不含稅)
TWD52,250.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 2,500 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD19.90 | TWD49,750.00 |
| 12500 + | TWD19.50 | TWD48,750.00 |
* 參考價格
- RS庫存編號:
- 919-4198
- 製造零件編號:
- SI4948BEY-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.4W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 14.5nC | |
| Forward Voltage Vf | -0.8V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.4W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 14.5nC | ||
Forward Voltage Vf -0.8V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Width 4 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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