製造零件編號

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 4 A, 20 V Enhancement, 8-Pin SOIC

RS庫存編號:: 165-2751
製造零件編號:: SI9933CDY-T1-GE3
製造商:: Vishay

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 4 A, 20 V Enhancement, 8-Pin SOIC

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD22,500.00

(不含稅)

TWD23,625.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年8月26日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
2500 - 10000	TWD9.00	TWD22,500.00
12500 +	TWD8.90	TWD22,250.00

* 參考價格

RS庫存編號:: 165-2751
製造零件編號:: SI9933CDY-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOIC
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	58mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	150°C
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	12 V
	Typical Gate Charge Qg @ Vgs	17nC
	Transistor Configuration	Isolated
	Length	5mm
	Height	1.55mm
	Width	4 mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOIC
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 58mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature 150°C
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 12 V
	Typical Gate Charge Qg @ Vgs 17nC
	Transistor Configuration Isolated
	Length 5mm
	Height 1.55mm
	Width 4 mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 4 A, 20 V Enhancement, 8-Pin SOIC

訂單超過 $1,300.00 免費送貨

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