ROHM N channel-Channel MOSFET, 280 A, 40 V, 3-Pin TO-263AB-3LSHYAD RJ1G10BBGTL1

N

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小計(1 組,共 2 件)*

TWD330.00

(不含稅)

TWD346.50

(含稅)

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  • 2026年6月08日 發貨
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單位
每單位
每膠帶*
2 - 18TWD165.00TWD330.00
20 - 98TWD145.00TWD290.00
100 +TWD117.00TWD234.00

* 參考價格

包裝方式:
RS庫存編號:
780-361
製造零件編號:
RJ1G10BBGTL1
製造商:
ROHM
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品牌

ROHM

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

280A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263AB-3LSHYAD

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

1.85mΩ

Maximum Gate Source Voltage Vgs

10V

Typical Gate Charge Qg @ Vgs

210nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

192W

Maximum Operating Temperature

150°C

Length

10.36mm

Width

8.9mm

Standards/Approvals

RoHS Compliant

Height

4.77mm

Automotive Standard

No

The ROHM Power MOSFET delivers high-performance N-channel switching for automotive and industrial power management. This AEC-Q101 qualified device is engineered for high-voltage applications, ensuring efficient operation in demanding vehicle environments.

Drain to source voltage of 100 V

Continuous drain current of 12 A

Compact DFN2020Y package

Automotive AEC-Q101 qualification

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