ROHM N channel-Channel MOSFET, 240 A, 60 V, 3-Pin TO-263AB-3LSHYAD RJ1L10BBGTL1
- RS庫存編號:
- 780-362
- 製造零件編號:
- RJ1L10BBGTL1
- 製造商:
- ROHM
N
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TWD332.00
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TWD348.60
(含稅)
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- 從 2026年6月08日 發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD166.00 | TWD332.00 |
| 20 - 98 | TWD146.50 | TWD293.00 |
| 100 + | TWD118.00 | TWD236.00 |
* 參考價格
- RS庫存編號:
- 780-362
- 製造零件編號:
- RJ1L10BBGTL1
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 240A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263AB-3LSHYAD | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.41mΩ | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Power Dissipation Pd | 192W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 8.9mm | |
| Height | 4.77mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 240A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263AB-3LSHYAD | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.41mΩ | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Power Dissipation Pd 192W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Width 8.9mm | ||
Height 4.77mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
The ROHM Power MOSFET delivers high-performance N-channel switching for high-current power management. This robust device is engineered for motor drives and DC/DC converters, ensuring exceptional efficiency in demanding industrial switching circuits.
Drain to source voltage of 60 V
Continuous drain current of 105 A
Ultra-low 1.85 mΩ typical on-resistance
High power dissipation of 192 W
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