ROHM N channel-Channel MOSFET, 240 A, 60 V, 3-Pin TO-263AB-3LSHYAD RJ1L10BBGTL1

N

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TWD348.60

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  • 2026年6月08日 發貨
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2 - 18TWD166.00TWD332.00
20 - 98TWD146.50TWD293.00
100 +TWD118.00TWD236.00

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包裝方式:
RS庫存編號:
780-362
製造零件編號:
RJ1L10BBGTL1
製造商:
ROHM
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品牌

ROHM

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

240A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263AB-3LSHYAD

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

2.41mΩ

Typical Gate Charge Qg @ Vgs

160nC

Maximum Power Dissipation Pd

192W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Width

8.9mm

Height

4.77mm

Length

10.36mm

Automotive Standard

No

The ROHM Power MOSFET delivers high-performance N-channel switching for high-current power management. This robust device is engineered for motor drives and DC/DC converters, ensuring exceptional efficiency in demanding industrial switching circuits.

Drain to source voltage of 60 V

Continuous drain current of 105 A

Ultra-low 1.85 mΩ typical on-resistance

High power dissipation of 192 W

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