ROHM RJ1L12BGN Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263AB RJ1L12BGNTLL

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TWD410.00

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TWD430.50

(含稅)

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200 +TWD190.50TWD381.00

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RS庫存編號:
183-6004
製造零件編號:
RJ1L12BGNTLL
製造商:
ROHM
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品牌

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Series

RJ1L12BGN

Package Type

TO-263AB

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

192W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

175nC

Maximum Operating Temperature

150°C

Width

9.2 mm

Length

10.4mm

Standards/Approvals

RoHS

Height

4.7mm

COO (Country of Origin):
KP
RJ1L12BGN is low on-resistance and small surface mount package MOSFET for switching application.

Low on - resistance

High power small mold package

Pb-free lead plating

Halogen free

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