ROHM RJ1N04BBHT Type N-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-263AB-3LSHYAD RJ1N04BBHTL1

RS庫存編號:: 687-400
製造零件編號:: RJ1N04BBHTL1
製造商:: ROHM

ROHM RJ1N04BBHT Type N-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-263AB-3LSHYAD RJ1N04BBHTL1

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可享批量折扣

小計（1 組，共 2 件）*

TWD139.00

(不含稅)

TWD145.96

訂單超過 $1,300.00 免費送貨

庫存資訊目前無法查詢

單位	每單位	每膠帶*
2 - 18	TWD69.50	TWD139.00
20 - 98	TWD61.00	TWD122.00
100 - 198	TWD55.00	TWD110.00
200 +	TWD43.00	TWD86.00

* 參考價格

RS庫存編號:: 687-400
製造零件編號:: RJ1N04BBHTL1
製造商:: ROHM

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Drain Source Voltage Vds	80V
	Series	RJ1N04BBHT
	Package Type	TO-263AB-3LSHYAD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.3mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	89W
	Typical Gate Charge Qg @ Vgs	46nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	15.5mm
	Width	10.36 mm
	Height	4.77mm
	Automotive Standard	No

	選取全部
	品牌 ROHM
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Drain Source Voltage Vds 80V
	Series RJ1N04BBHT
	Package Type TO-263AB-3LSHYAD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.3mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 89W
	Typical Gate Charge Qg @ Vgs 46nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 15.5mm
	Width 10.36 mm
	Height 4.77mm
	Automotive Standard No

Datasheet - RJ1N04BBHTL1

COO (Country of Origin):: JP

The ROHM N channel power MOSFET designed to deliver outstanding efficiency in demanding applications. With a maximal drain-source voltage of 80V and a continuous drain current of 100A, it is tailored for effective switching tasks in a variety of circuits, making it ideal for motor drives and DC/DC converters. Its low on-resistance of 5.3mΩ ensures that energy loss is minimised, resulting in better thermal management and reliable operation under high-power conditions. Compliant with RoHS standards, this device not only meets environmental requirements but also assures high reliability and safety for end-users in diverse electronics.

Low on resistance for effective power management and reduced thermal load

Capable of handling continuous drain currents of ±100A, ideal for high-performance designs

Comprehensive testing for robustness, including 100% Rg and UIS testing

Pb free plating ensures compliance with international environmental standards

Halogen-free construction contributes to environmental sustainability

Robust packaging specifications, including embossed tape for dependable transport and storage

Operating temperature range from -55 to +150°C provides operational flexibility across diverse environments

ROHM RJ1N04BBHT Type N-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-263AB-3LSHYAD RJ1N04BBHTL1

訂單超過 $1,300.00 免費送貨

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