ROHM HT8MD5HT Dual N-Channel Single MOSFETs, 80 V Enhancement, 8-Pin HSMT-8 HT8MD5HTB1
- RS庫存編號:
- 687-385
- 製造零件編號:
- HT8MD5HTB1
- 製造商:
- ROHM
N
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可享批量折扣
小計（1 組，共 2 件）*
TWD45.00
(不含稅)
TWD47.24
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 200 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD22.50 | TWD45.00 |
| 20 - 48 | TWD19.50 | TWD39.00 |
| 50 - 198 | TWD18.00 | TWD36.00 |
| 200 - 998 | TWD14.50 | TWD29.00 |
| 1000 + | TWD14.00 | TWD28.00 |
* 參考價格
- RS庫存編號:
- 687-385
- 製造零件編號:
- HT8MD5HTB1
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Dual N | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HSMT-8 | |
| Series | HT8MD5HT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 13.0W | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Length | 3.45mm | |
| Width | 3.4 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Dual N | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HSMT-8 | ||
Series HT8MD5HT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 13.0W | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Length 3.45mm | ||
Width 3.4 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM Power MOSFET designed for versatile electronic applications. With its dual N channel and P channel configuration, this component delivers exceptional performance, allowing for effective power management in motor drives and other demanding circuits. Features such as low on-resistance ensure minimal power loss during operation, while the HSMT8 packaging allows for a compact footprint without compromising performance. HT8MD5H supports a wide voltage range and is compliant with RoHS and halogen-free standards, making it an ideal choice for environmentally-conscious designs. Built with reliability in mind, this MOSFET is suitable for various applications requiring robust performance under varying conditions.
Low on resistance designs enhance efficiency in power applications
High power capabilities in a compact HSMT8 package streamline integration
RoHS compliant and halogen-free construction supports eco-friendly designs
100% Rg and UIS tested for reliability under demanding operational conditions
Optimised for motor drive applications, ensuring effective power control
Wide voltage range ensures versatility in various electronic environments
Designed to withstand maximum junction temperatures of up to 150°C
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