ROHM HP8KF7H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSOP-8 HP8KF7HTB1

N

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小計(1 組,共 2 件)*

TWD110.00

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TWD115.50

(含稅)

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2 - 18TWD55.00TWD110.00
20 - 48TWD48.50TWD97.00
50 - 198TWD43.50TWD87.00
200 - 998TWD35.00TWD70.00
1000 +TWD34.50TWD69.00

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包裝方式:
RS庫存編號:
687-364
製造零件編號:
HP8KF7HTB1
製造商:
ROHM
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品牌

ROHM

Channel Type

Dual N

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

150V

Series

HP8KF7H

Package Type

HSOP-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

62mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

26W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Width

6.1 mm

Standards/Approvals

RoHS

Height

1.1mm

Length

6.1mm

Automotive Standard

No

The ROHM N channel power MOSFET designed to efficiently manage power in various electronic applications. With a low on-resistance of 62mΩ and a compact HSOP8 package, this MOSFET ensures superior thermal management and high reliability. Its specifications support a continuous drain current of ±18.5A, making it ideal for demanding tasks such as motor drives. Offering excellent energy efficiency and compliance with RoHS and halogen-free standards, it seamlessly integrates into advanced electronic designs while ensuring environmental responsibility.

Optimised for low on resistance, enhancing overall efficiency

Compact HSOP8 package allows for space-saving designs

Ideal for a variety of applications, including motor drives

Meets RoHS and halogen-free requirements for environmental safety

High continuous and pulsed drain current ratings ensure reliability under load

Excellent thermal management with low thermal resistance ratings

Designed for high-performance switching applications with minimal delay

Stable operation across a wide temperature range from -55 to +150°C

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