ROHM HT8KF6H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSMT-8 HT8KF6HTB1
- RS庫存編號:
- 687-371
- 製造零件編號:
- HT8KF6HTB1
- 製造商:
- ROHM
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 2 件）*
TWD55.00
(不含稅)
TWD57.76
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD27.50 | TWD55.00 |
| 20 - 48 | TWD24.50 | TWD49.00 |
| 50 - 198 | TWD22.00 | TWD44.00 |
| 200 - 998 | TWD17.50 | TWD35.00 |
| 1000 + | TWD17.00 | TWD34.00 |
* 參考價格
- RS庫存編號:
- 687-371
- 製造零件編號:
- HT8KF6HTB1
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Dual N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HT8KF6H | |
| Package Type | HSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 214mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 14W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Length | 3.45mm | |
| Width | 3.4 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Dual N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HT8KF6H | ||
Package Type HSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 214mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 14W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Length 3.45mm | ||
Width 3.4 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM N channel power MOSFET designed for efficient power management in various applications. This component provides robust electrical characteristics, including a maximum continuous drain current of ±7.0A, ensuring reliable operation under high loads. Its Pb-free and halogen-free materials meet RoHS standards, contributing to environmentally friendly designs. This MOSFET's thermal resistance is optimised, allowing for effective heat dissipation, thus improving device longevity and performance in various electronic applications.
Low on resistance for improved efficiency
High power capacity in a compact HSMT8 mould package
Complies with RoHS regulations with Pb free plating
Halogen-free design to support eco-friendly initiatives
Versatile application in motor drives and power management systems
High maximum junction temperature rating of 150°C
Impressive maximum power dissipation of 14W
Reliable avalanche characteristics with a maximum energy of 0.24mJ
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