ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB
- RS庫存編號:
- 687-380
- 製造零件編號:
- RQ3P120BKFRATCB
- 製造商:
- ROHM
N
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 組,共 2 件)*
TWD46.00
(不含稅)
TWD48.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 100 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 18 | TWD23.00 | TWD46.00 |
| 20 - 48 | TWD20.50 | TWD41.00 |
| 50 - 198 | TWD18.50 | TWD37.00 |
| 200 - 998 | TWD15.00 | TWD30.00 |
| 1000 + | TWD14.50 | TWD29.00 |
* 參考價格
- RS庫存編號:
- 687-380
- 製造零件編號:
- RQ3P120BKFRATCB
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSMT-8AG | |
| Series | RQ3P120BKFRA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 6.9nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 3.30mm | |
| Standards/Approvals | RoHS | |
| Width | 300 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSMT-8AG | ||
Series RQ3P120BKFRA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 6.9nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 3.30mm | ||
Standards/Approvals RoHS | ||
Width 300 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM N channel power MOSFET designed for efficient energy management in various applications. Capable of withstanding drain-source voltages of up to 100V and continuous current ratings of ±12A, this MOSFET excels in both power density and thermal resistance. The compact HSMT8AG package significantly reduces PCB space requirements by 64%, making it an ideal choice for modern electronic designs that demand reliability and efficiency. With AEC-Q101 qualification, it ensures robust operation in automotive applications, serving a wide range of use cases from ADAS to lighting solutions.
Small high-powered package optimises space on PCBs by 64%
High mounting reliability achieved through innovative terminal and plating treatments
AEC Q101 qualification ensures reliability in automotive applications
Designed to handle a maximum power dissipation of 40W for effective thermal management
Low on-state resistance of 58mΩ enhances efficiency and performance
Robust gate-source voltage tolerance of ±20V expands integration possibilities
Avalanche rating of 8A and energy dissipation of 5.2mJ provides extra protection during operation
Highly reliable operation across a temperature range of -55 to +150°C
相關連結
- ROHM RQ3L270 Type P-Channel Single MOSFETs 60 V Enhancement, 8-Pin HSMT-8AG RQ3L270BJFRATCB
- ROHM HT8KF6H Dual N-Channel Single MOSFETs 8-Pin HSMT-8 HT8KF6HTB1
- ROHM HT8MD5HT Dual N-Channel Single MOSFETs 8-Pin HSMT-8 HT8MD5HTB1
- ROHM RH6G04 Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin HSMT-8 RH6G040CHTB1
- ROHM HT8MB5 Type N 40 V Enhancement, 8-Pin HSMT-8 HT8MB5TB1
- ROHM HT8MC5 Type P 60 V Enhancement, 8-Pin HSMT-8 HT8MC5TB1
- ROHM RQ3G270BKFRA Type P-Channel MOSFET 40 V Depletion, 8-Pin HSMT-8AG RQ3G270BKFRATCB
- ROHM RQ3L270BKFRA Type P-Channel MOSFET 60 V Depletion, 8-Pin HSMT-8AG RQ3L270BKFRATCB
