ROHM HT8MB5 Type N, Type P-Channel Single MOSFETs, 40 V Enhancement, 8-Pin HSMT-8 HT8MB5TB1
- RS庫存編號:
- 687-388
- 製造零件編號:
- HT8MB5TB1
- 製造商:
- ROHM
N
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可享批量折扣
小計（1 組，共 2 件）*
TWD43.00
(不含稅)
TWD45.16
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 100 件準備從其他地點送貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 2 - 48 | TWD21.50 | TWD43.00 |
| 50 - 198 | TWD19.00 | TWD38.00 |
| 200 - 998 | TWD17.00 | TWD34.00 |
| 1000 + | TWD13.50 | TWD27.00 |
* 參考價格
- RS庫存編號:
- 687-388
- 製造零件編號:
- HT8MB5TB1
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N, Type P | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | HSMT-8 | |
| Series | HT8MB5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Power Dissipation Pd | 13W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 0.8mm | |
| Length | 3.45mm | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N, Type P | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type HSMT-8 | ||
Series HT8MB5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Power Dissipation Pd 13W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 0.8mm | ||
Length 3.45mm | ||
Width 3.4 mm | ||
Automotive Standard No | ||
The ROHM P channel power MOSFET designed for demanding applications such as motor drives and switching power supplies. This component features exceptionally low on-resistance, making it ideal for power management solutions where efficiency is paramount. The HT8MB5 is housed in a compact HSMT8 package, facilitating space-saving designs while maintaining high performance. With impressive maximum ratings and a robust design, this MOSFET provides reliable operation in varying environmental conditions, ensuring stability and longevity in its operations.
Low on resistance enhances efficiency and thermal management
Compact HSMT8 package allows for reduced footprint in designs
Rated for a drain-source voltage of 40V ensures versatility in applications
Power dissipation capability of 13W supports high-power applications
Pb free plating along with RoHS compliance demonstrates eco-friendliness
Halogen-free materials promote safety in electronic applications
100% tested for Rg and UIS, guaranteeing reliability and performance
Suitable for both switching and motor drive applications, increasing usability
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