ROHM RQ3 Type N-Channel MOSFET, 60 V Enhancement, 8-Pin HSMT-8 RQ3L060BGTB1

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小計(1 組,共 10 件)*

TWD188.00

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TWD197.40

(含稅)

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10 - 90TWD18.80TWD188.00
100 - 240TWD17.80TWD178.00
250 - 490TWD16.60TWD166.00
500 - 990TWD15.20TWD152.00
1000 +TWD14.60TWD146.00

* 參考價格

包裝方式:
RS庫存編號:
264-578
製造零件編號:
RQ3L060BGTB1
製造商:
ROHM
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品牌

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Drain Source Voltage Vds

60V

Package Type

HSMT-8

Series

RQ3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

38mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

14W

Typical Gate Charge Qg @ Vgs

5.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The ROHM N-channel 60V 15.5A power MOSFET in an HSMT8 package features low on-resistance and a high-power design, making it ideal for switching, motor drives, and DC or DC converter applications.

Low on-resistance

High Power small mold Package HSMT8

Pb-free plating and RoHS compliant

Halogen Free

100% Rg and UIS tested

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