ROHM RQ3 Type P-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin HSMT-8 RQ3L120BJFRATCB

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小計(1 組,共 10 件)*

TWD215.00

(不含稅)

TWD225.80

(含稅)

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下方訂單 TWD1,300.00(不含稅)成本 TWD500.00。
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  • 加上 60 件從 2026年2月23日 起發貨
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單位
每單位
每膠帶*
10 - 90TWD21.50TWD215.00
100 - 240TWD20.40TWD204.00
250 - 490TWD18.90TWD189.00
500 - 990TWD17.40TWD174.00
1000 +TWD16.80TWD168.00

* 參考價格

包裝方式:
RS庫存編號:
265-252
製造零件編號:
RQ3L120BJFRATCB
製造商:
ROHM
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品牌

ROHM

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

60V

Package Type

HSMT-8

Series

RQ3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

106mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

40W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15.7nC

Maximum Operating Temperature

150°C

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

The ROHM Automotive grade MOSFET is an ideal solution for Advanced Driver Assistance Systems, infotainment, lighting and body applications. Its robust construction ensures reliable operation in demanding automotive environments. Realization of high mounting reliability by original terminal and plating treatment.

RoHS compliant

AEC Q101 Qualified

Small high powered package

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