製造零件編號

ROHM N-Channel MOSFET, 39 A, 100 V Enhancement, 8-Pin HSMT RQ3P300BHTB1

Name: ROHM N-Channel MOSFET, 39 A, 100 V Enhancement, 8-Pin HSMT RQ3P300BHTB1
Brand: ROHM
SKU: 235-2774
Availability: InStock

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

查看批量定價選項

小計（1 卷，共 3000 件）*

TWD80,100.00

(不含稅)

TWD84,120.00

(含稅)

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每卷*
3000 - 12000	TWD26.70	TWD80,100.00
15000 +	TWD24.10	TWD72,300.00

* 參考價格

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	ROHM
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	39 A
	Maximum Drain Source Voltage (Vds)	100 V
	Channel Mode	Enhancement
	Pin Count	8
	Package Type	HSMT
	Automotive Standard	No
	Forward Voltage (Vf)	1.2 V
	Height	3.4 mm
	Length	3.15 mm
	Maximum Drain Source Resistance (Rds)	15.5 mΩ
	Maximum Gate Source Voltage (Vgs)	20 V
	Maximum Operating Temperature	150 °C
	Maximum Power Dissipation (Pd)	2 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Surface
	Standards/Approvals	No
	Typical Gate Charge (Qg) @ Vgs	36 nC
	Width	850 μm

	選取全部
	品牌 ROHM
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 39 A
	Maximum Drain Source Voltage (Vds) 100 V
	Channel Mode Enhancement
	Pin Count 8
	Package Type HSMT
	Automotive Standard No
	Forward Voltage (Vf) 1.2 V
	Height 3.4 mm
	Length 3.15 mm
	Maximum Drain Source Resistance (Rds) 15.5 mΩ
	Maximum Gate Source Voltage (Vgs) 20 V
	Maximum Operating Temperature 150 °C
	Maximum Power Dissipation (Pd) 2 W
	Minimum Operating Temperature -55 °C
	Mount Type Surface
	Standards/Approvals No
	Typical Gate Charge (Qg) @ Vgs 36 nC
	Width 850 μm

The ROHM N channel power MOSFET with low on state resistance has drain to source voltage of 100 V. It is Ideal for switching purpose.

Small surface mount package

Pb-free lead plating

RoHS compliant

相關連結