製造零件編號

ROHM RH6P040BH N-Channel MOSFET, 40 A, 100 V Enhancement HSMT-8 RH6P040BHTB1

RS庫存編號:: 252-3154
製造零件編號:: RH6P040BHTB1
製造商:: ROHM

ROHM RH6P040BH N-Channel MOSFET, 40 A, 100 V Enhancement HSMT-8 RH6P040BHTB1

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RS庫存編號:: 252-3154
製造零件編號:: RH6P040BHTB1
製造商:: ROHM

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產品詳細資訊

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選取全部	屬性	值
	品牌	ROHM
	Series	RH6P040BH
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	40 A
	Maximum Drain Source Voltage (Vds)	100 V
	Channel Mode	Enhancement
	Package Type	HSMT-8
	Automotive Standard	AEC-Q101
	Forward Voltage (Vf)	1.2 V
	Maximum Drain Source Resistance (Rds)	2.7 mΩ
	Maximum Gate Source Voltage (Vgs)	20 V
	Maximum Operating Temperature	175 °C
	Maximum Power Dissipation (Pd)	104 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Surface Mount
	Standards/Approvals	RoHS, Pb Free
	Typical Gate Charge (Qg) @ Vgs	16.7 nC

	選取全部
	品牌 ROHM
	Series RH6P040BH
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 40 A
	Maximum Drain Source Voltage (Vds) 100 V
	Channel Mode Enhancement
	Package Type HSMT-8
	Automotive Standard AEC-Q101
	Forward Voltage (Vf) 1.2 V
	Maximum Drain Source Resistance (Rds) 2.7 mΩ
	Maximum Gate Source Voltage (Vgs) 20 V
	Maximum Operating Temperature 175 °C
	Maximum Power Dissipation (Pd) 104 W
	Minimum Operating Temperature -55 °C
	Mount Type Surface Mount
	Standards/Approvals RoHS, Pb Free
	Typical Gate Charge (Qg) @ Vgs 16.7 nC

Datasheet - RH6P040BHTB1

The Rohms offers a RH series of a power mosfet with low on resistance and suitable for switching. It is halogen free with 100% Rg and UIS tested with the input volage of 100 V.

Operating junction and storage temperature range is -55℃ to +150℃

Mounted on a cu board

Drain current is 40 A

Power dissipation is 59 W

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ROHM RH6P040BH N-Channel MOSFET, 40 A, 100 V Enhancement HSMT-8 RH6P040BHTB1

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