ROHM RJ1 1 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263AB RJ1P07CBHTL1

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TWD223.64

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包裝方式:
RS庫存編號:
264-884
製造零件編號:
RJ1P07CBHTL1
製造商:
ROHM
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品牌

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263AB

Series

RJ1

Pin Count

3

Maximum Drain Source Resistance Rds

5.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

135W

Typical Gate Charge Qg @ Vgs

73.0nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Number of Elements per Chip

1

The ROHM Nch 100V 120A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.

Low on-resistance

High power small mold package (TO263AB)

Pb-free plating and RoHS compliant

100% UIS tested

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