ROHM RJ1 1 Type N-Channel MOSFET, 105 A, 150 V Enhancement, 3-Pin TO-263AB RJ1R10BBHTL1
- RS庫存編號:
- 264-880
- 製造零件編號:
- RJ1R10BBHTL1
- 製造商:
- ROHM
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小計（1 件）*
TWD170.00
(不含稅)
TWD178.50
(含稅)
訂單超過 $1,300.00 免費送貨
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* 參考價格
- RS庫存編號:
- 264-880
- 製造零件編號:
- RJ1R10BBHTL1
- 製造商:
- ROHM
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 105A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263AB | |
| Series | RJ1 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 181W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Number of Elements per Chip | 1 | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 105A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263AB | ||
Series RJ1 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 181W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Number of Elements per Chip 1 | ||
The ROHM Nch 150V 170A TO-263AB power MOSFET with low on-resistance and high power small mold package, suitable for switching.
Low on-resistance
High power small mold package (TO263AB)
Pb-free plating and RoHS compliant
100% UIS tested
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