Microchip DN3525 Type N-Channel Single MOSFETs, 360 mA, 250 V Depletion, 3-Pin SOT-89 DN3525N8-G
- RS庫存編號:
- 649-455
- 製造零件編號:
- DN3525N8-G
- 製造商:
- Microchip
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|---|---|---|
| 5 - 45 | TWD31.00 | TWD155.00 |
| 50 - 245 | TWD27.40 | TWD137.00 |
| 250 - 495 | TWD24.60 | TWD123.00 |
| 500 + | TWD19.40 | TWD97.00 |
* 參考價格
- RS庫存編號:
- 649-455
- 製造零件編號:
- DN3525N8-G
- 製造商:
- Microchip
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 360mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | DN3525 | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead (Pb)-free/RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 360mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Series DN3525 | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead (Pb)-free/RoHS | ||
Automotive Standard No | ||
The Microchip Low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
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