Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND250K1-G
- RS庫存編號:
- 598-794
- 製造零件編號:
- LND250K1-G
- 製造商:
- Microchip
N
小計（1 卷，共 3000 件）*
TWD64,500.00
(不含稅)
TWD67,740.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年2月16日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD21.50 | TWD64,500.00 |
* 參考價格
- RS庫存編號:
- 598-794
- 製造零件編號:
- LND250K1-G
- 製造商:
- Microchip
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N-Channel DMOS FET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 9V | |
| Package Type | SOT-23-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Depletion Mode | |
| Maximum Power Dissipation Pd | 360mW | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -25°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.3mm | |
| Width | 1.75 mm | |
| Length | 3.05mm | |
| Standards/Approvals | RoHS, ISO/TS‑16949 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N-Channel DMOS FET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 9V | ||
Package Type SOT-23-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Depletion Mode | ||
Maximum Power Dissipation Pd 360mW | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -25°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 125°C | ||
Height 1.3mm | ||
Width 1.75 mm | ||
Length 3.05mm | ||
Standards/Approvals RoHS, ISO/TS‑16949 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Microchip High voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and low CISS
ESD gate protection
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