Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN3545N8-G

N
查看所有MOSFETs

小計（1 卷，共 2000 件）*

TWD66,400.00

(不含稅)

TWD69,720.00

(含稅)

Add to Basket
選擇或輸入數量
暫時缺貨
  • 從 2026年2月09日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
2000 +TWD33.20TWD66,400.00

* 參考價格

RS庫存編號:
598-869
製造零件編號:
DN3545N8-G
製造商:
Microchip
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Microchip

Product Type

Single MOSFETs

Channel Type

N-Channel DMOS FET

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

500V

Package Type

TO-252 (D-PAK-3)

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Depletion Mode

Forward Voltage Vf

1.8V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

3 mm

Length

4.4mm

Height

2.29mm

Standards/Approvals

RoHS, ISO/TS‑16949

Automotive Standard

No

The Microchip Depletion mode transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

相關連結