Microchip DN3145 N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3)

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RS庫存編號:
598-898
製造零件編號:
DN3145N8-G
製造商:
Microchip
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品牌

Microchip

Product Type

Single MOSFETs

Channel Type

N-Channel DMOS FET

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

500V

Series

DN3145

Package Type

TO-252 (D-PAK-3)

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Depletion Mode

Forward Voltage Vf

1.8V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Length

4.4mm

Standards/Approvals

ISO/TS‑16949, RoHS

Height

2.29mm

Width

3 mm

Automotive Standard

No

The Microchip Depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

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