Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND01K1-G

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RS庫存編號:
598-897
製造零件編號:
LND01K1-G
製造商:
Microchip
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品牌

Microchip

Channel Type

N-Channel DMOS FET

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

9V

Package Type

SOT-23-5

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Depletion Mode

Forward Voltage Vf

1.8V

Minimum Operating Temperature

-25°C

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

360mW

Maximum Operating Temperature

125°C

Height

1.3mm

Length

3.05mm

Width

1.75 mm

Standards/Approvals

ISO/TS‑16949, RoHS

Automotive Standard

No

The Microchip Depletion-Mode MOSFET is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Low on resistance

Low input capacitance

Fast switching speeds

High input impedance and high gain

Low power drive requirement

Ease of paralleling

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