Microchip LND01 N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND01K1-G
- RS庫存編號:
- 598-897
- 製造零件編號:
- LND01K1-G
- 製造商:
- Microchip
小計（1 卷，共 3000 件）*
TWD57,300.00
(不含稅)
TWD60,180.00
(含稅)
添加 3000 件 件可免費送貨
暫時缺貨
- 從 2026年4月13日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD19.10 | TWD57,300.00 |
* 參考價格
- RS庫存編號:
- 598-897
- 製造零件編號:
- LND01K1-G
- 製造商:
- Microchip
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N-Channel DMOS FET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 9V | |
| Package Type | SOT-23-5 | |
| Series | LND01 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Depletion Mode | |
| Minimum Operating Temperature | -25°C | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | ISO/TS‑16949, RoHS | |
| Width | 1.75 mm | |
| Height | 1.3mm | |
| Length | 3.05mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N-Channel DMOS FET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 9V | ||
Package Type SOT-23-5 | ||
Series LND01 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Depletion Mode | ||
Minimum Operating Temperature -25°C | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals ISO/TS‑16949, RoHS | ||
Width 1.75 mm | ||
Height 1.3mm | ||
Length 3.05mm | ||
Automotive Standard No | ||
The Microchip Depletion-Mode MOSFET is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Low on resistance
Low input capacitance
Fast switching speeds
High input impedance and high gain
Low power drive requirement
Ease of paralleling
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