Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 MIC94050YM4-TR
- RS庫存編號:
- 599-040
- 製造零件編號:
- MIC94050YM4-TR
- 製造商:
- Microchip
N
小計(1 卷,共 3000 件)*
TWD60,900.00
(不含稅)
TWD63,960.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年3月02日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD20.30 | TWD60,900.00 |
* 參考價格
- RS庫存編號:
- 599-040
- 製造零件編號:
- MIC94050YM4-TR
- 製造商:
- Microchip
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | N-Channel DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 9V | |
| Package Type | SOT-23-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Depletion Mode | |
| Maximum Power Dissipation Pd | 360mW | |
| Minimum Operating Temperature | -25°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.3mm | |
| Width | 1.75 mm | |
| Standards/Approvals | RoHS, ISO/TS‑16949 | |
| Length | 3.05mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type N-Channel DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 9V | ||
Package Type SOT-23-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Depletion Mode | ||
Maximum Power Dissipation Pd 360mW | ||
Minimum Operating Temperature -25°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 125°C | ||
Height 1.3mm | ||
Width 1.75 mm | ||
Standards/Approvals RoHS, ISO/TS‑16949 | ||
Length 3.05mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Microchip 4-terminal silicon gate P-channel MOSFET provides low on-resistance in a compact package. Designed for high-side switch applications where space is critical, it typically exhibits an on-resistance of 0.125Ω at a 4.5V gate-to-source voltage. The MOSFET operates with as low as 1.8V gate-to-source voltage.
Operates with 1.8V gate-to-source voltage
Separate substrate connection allows reverse blocking
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