Microchip LND150 N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND150N3-G-P003
- RS庫存編號:
- 599-150
- 製造零件編號:
- LND150N3-G-P003
- 製造商:
- Microchip
小計（1 卷，共 2000 件）*
TWD44,200.00
(不含稅)
TWD46,400.00
(含稅)
添加 2000 件 件可免費送貨
暫時缺貨
- 從 2026年3月31日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 + | TWD22.10 | TWD44,200.00 |
* 參考價格
- RS庫存編號:
- 599-150
- 製造零件編號:
- LND150N3-G-P003
- 製造商:
- Microchip
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | N-Channel DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 9V | |
| Package Type | SOT-23-5 | |
| Series | LND150 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Depletion Mode | |
| Minimum Operating Temperature | -25°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | ISO/TS‑16949, RoHS | |
| Height | 1.3mm | |
| Width | 1.75 mm | |
| Length | 3.05mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type N-Channel DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 9V | ||
Package Type SOT-23-5 | ||
Series LND150 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Depletion Mode | ||
Minimum Operating Temperature -25°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals ISO/TS‑16949, RoHS | ||
Height 1.3mm | ||
Width 1.75 mm | ||
Length 3.05mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Microchip High voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and low CISS
ESD gate protection
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