Microchip VN2460 Type N-Channel Single MOSFETs, 250 mA, 600 V Enhancement, 3-Pin SOT-89 VN2460N8-G
- RS庫存編號:
- 598-312
- 製造零件編號:
- VN2460N8-G
- 製造商:
- Microchip
N
小計（1 卷，共 2000 件）*
TWD71,400.00
(不含稅)
TWD74,960.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月04日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 + | TWD35.70 | TWD71,400.00 |
* 參考價格
- RS庫存編號:
- 598-312
- 製造零件編號:
- VN2460N8-G
- 製造商:
- Microchip
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | VN2460 | |
| Package Type | SOT-89 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1.6mm | |
| Length | 4.6mm | |
| Width | 2.6 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series VN2460 | ||
Package Type SOT-89 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1.6mm | ||
Length 4.6mm | ||
Width 2.6 mm | ||
Automotive Standard No | ||
The Microchip N Channel enhancement-mode vertical MOSFET is a normally-off transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors while offering the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance even under demanding conditions.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and high gain
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