製造零件編號

Microchip TN2510 Type N-Channel Single MOSFETs, 0.73 A, 100 V Enhancement, 3-Pin SOT-89 TN2510N8-G

RS庫存編號:: 649-584
製造零件編號:: TN2510N8-G
製造商:: Microchip

Microchip TN2510 Type N-Channel Single MOSFETs, 0.73 A, 100 V Enhancement, 3-Pin SOT-89 TN2510N8-G

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小計（1 組，共 5 件）*

TWD165.00

(不含稅)

TWD173.25

訂單超過 $1,300.00 免費送貨

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單位	每單位	每膠帶*
5 - 45	TWD33.00	TWD165.00
50 - 245	TWD29.00	TWD145.00
250 - 495	TWD26.00	TWD130.00
500 +	TWD20.60	TWD103.00

* 參考價格

RS庫存編號:: 649-584
製造零件編號:: TN2510N8-G
製造商:: Microchip

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Microchip
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	0.73A
	Maximum Drain Source Voltage Vds	100V
	Series	TN2510
	Package Type	SOT-89
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.5Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Forward Voltage Vf	1.8V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.6W
	Maximum Operating Temperature	150°C
	Standards/Approvals	Lead (Pb)-free/RoHS
	Automotive Standard	No

	選取全部
	品牌 Microchip
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 0.73A
	Maximum Drain Source Voltage Vds 100V
	Series TN2510
	Package Type SOT-89
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.5Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Forward Voltage Vf 1.8V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.6W
	Maximum Operating Temperature 150°C
	Standards/Approvals Lead (Pb)-free/RoHS
	Automotive Standard No

Datasheet - TN2510N8-G

The Microchip Low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Microchip TN2510 Type N-Channel Single MOSFETs, 0.73 A, 100 V Enhancement, 3-Pin SOT-89 TN2510N8-G

訂單超過 $1,300.00 免費送貨

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