Microchip VN2460 N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3
- RS庫存編號:
- 598-665
- 製造零件編號:
- VN2460N3-G
- 製造商:
- Microchip
小計（1 袋，共 1000 件）*
TWD34,400.00
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TWD36,120.00
(含稅)
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- 從 2026年4月20日 發貨
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單位 | 每單位 | 每袋* |
|---|---|---|
| 1000 + | TWD34.40 | TWD34,400.00 |
* 參考價格
- RS庫存編號:
- 598-665
- 製造零件編號:
- VN2460N3-G
- 製造商:
- Microchip
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N-Channel Vertical DMOS FET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 90V | |
| Package Type | TO-92-3 (TO-226AA) | |
| Series | VN2460 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Height | 5.33mm | |
| Width | 4.19 mm | |
| Length | 5.08mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N-Channel Vertical DMOS FET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 90V | ||
Package Type TO-92-3 (TO-226AA) | ||
Series VN2460 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Height 5.33mm | ||
Width 4.19 mm | ||
Length 5.08mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Microchip N Channel enhancement-mode vertical MOSFET is a normally-off transistor that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors while offering the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance even under demanding conditions.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and high gain
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