Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)
- RS庫存編號:
- 598-595
- 製造零件編號:
- VP3203N8-G
- 製造商:
- Microchip
N
小計（1 卷，共 2000 件）*
TWD93,400.00
(不含稅)
TWD98,080.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年3月27日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 + | TWD46.70 | TWD93,400.00 |
* 參考價格
- RS庫存編號:
- 598-595
- 製造零件編號:
- VP3203N8-G
- 製造商:
- Microchip
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | N-Channel Vertical DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 90V | |
| Package Type | TO-92-3 (TO-226AA) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 5.08mm | |
| Width | 4.19 mm | |
| Height | 5.33mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type N-Channel Vertical DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 90V | ||
Package Type TO-92-3 (TO-226AA) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 5.08mm | ||
Width 4.19 mm | ||
Height 5.33mm | ||
Automotive Standard No | ||
The Microchip P Channel enhancement-mode vertical MOSFET is a low-threshold, normally-off transistor that utilizes a vertical DMOS structure and Supertex’s proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient inherent in MOS devices. As with all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown, ensuring robust and reliable performance.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
High input impedance and high gain
Excellent thermal stability
相關連結
- Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs 90 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)
- Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)
- Microchip N-Channel DMOS FET-Channel Single MOSFETs 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3)
- Microchip N-Channel DMOS FET-Channel Single MOSFETs 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN2450K4-G
- Microchip N-Channel DMOS FET-Channel Single MOSFETs 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN3765K4-G
- Microchip N-Channel DMOS FET-Channel Single MOSFETs 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN3545N8-G
- Microchip N-Channel DMOS FET-Channel Single MOSFETs 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN2535N5-G
- Microchip N-Channel DMOS FET-Channel Single MOSFETs 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN3145N8-G