Infineon ISA Type N, Type P-Channel MOSFET, 9.6 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1
- RS庫存編號:
- 348-909
- 製造零件編號:
- ISA170230C04LMDSXTMA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 包，共 10 件）*
TWD364.00
(不含稅)
TWD382.20
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 3,990 件從 2026年6月08日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 90 | TWD36.40 | TWD364.00 |
| 100 - 240 | TWD34.60 | TWD346.00 |
| 250 - 490 | TWD32.00 | TWD320.00 |
| 500 - 990 | TWD29.50 | TWD295.00 |
| 1000 + | TWD28.40 | TWD284.00 |
* 參考價格
- RS庫存編號:
- 348-909
- 製造零件編號:
- ISA170230C04LMDSXTMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 9.6A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | ISA | |
| Package Type | PG-DSO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC, IEC61249‐2‐21 | |
| Height | 1.75mm | |
| Length | 6.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 9.6A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series ISA | ||
Package Type PG-DSO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC, IEC61249‐2‐21 | ||
Height 1.75mm | ||
Length 6.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.
100% avalanche tested
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249‑2‑21
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