Infineon ISA Dual N-Channel MOSFET, 9.6 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA170170N04LMDSXTMA1

可享批量折扣

小計(1 包,共 20 件)*

TWD388.00

(不含稅)

TWD407.40

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 3,980 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每包*
20 - 180TWD19.40TWD388.00
200 - 480TWD18.50TWD370.00
500 - 980TWD17.10TWD342.00
1000 - 1980TWD15.70TWD314.00
2000 +TWD15.10TWD302.00

* 參考價格

RS庫存編號:
348-912
製造零件編號:
ISA170170N04LMDSXTMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Dual N

Maximum Continuous Drain Current Id

9.6A

Maximum Drain Source Voltage Vds

40V

Series

ISA

Package Type

PG-DSO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

6nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC Standard

COO (Country of Origin):
CN
The Infineon OptiMOS 3 Power Transistor is a dual N-channel, logic level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps reduce conduction losses and increase overall system efficiency. Additionally, the transistor offers superior thermal resistance, ensuring better heat management and reliability in demanding conditions. This combination of features makes it ideal for applications requiring efficient power switching and thermal performance.

100% avalanche tested

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249‑2‑21

相關連結