Infineon ISA Type N, Type P-Channel MOSFET, 10.2 A, 30 V Enhancement, 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA
- RS庫存編號:
- 348-906
- 製造零件編號:
- ISA150233C03LMDSXTMA
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 20 件）*
TWD458.00
(不含稅)
TWD480.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4,000 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 180 | TWD22.90 | TWD458.00 |
| 200 - 480 | TWD21.70 | TWD434.00 |
| 500 + | TWD20.10 | TWD402.00 |
* 參考價格
- RS庫存編號:
- 348-906
- 製造零件編號:
- ISA150233C03LMDSXTMA
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 10.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-DSO-8 | |
| Series | ISA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249‐2‐21, JEDEC | |
| Length | 6.2mm | |
| Width | 5 mm | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 10.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-DSO-8 | ||
Series ISA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249‐2‐21, JEDEC | ||
Length 6.2mm | ||
Width 5 mm | ||
Height 1.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.
100% avalanche tested
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249‑2‑21
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