製造零件編號

Infineon ISA Type P, Type N-Channel MOSFET, 8.4 A, 30 V Enhancement, 3-Pin PG-TO252-3 ISA220280C03LMDSXTMA1

RS庫存編號:: 348-904
製造零件編號:: ISA220280C03LMDSXTMA1
製造商:: Infineon

Infineon ISA Type P, Type N-Channel MOSFET, 8.4 A, 30 V Enhancement, 3-Pin PG-TO252-3 ISA220280C03LMDSXTMA1

可享批量折扣

小計（1 包，共 20 件）*

TWD342.00

(不含稅)

TWD359.20

訂單超過 $1,300.00 免費送貨

有庫存

3,980 件準備從其他地點送貨

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單位	每單位	每包*
20 - 180	TWD17.10	TWD342.00
200 - 480	TWD16.30	TWD326.00
500 - 980	TWD15.10	TWD302.00
1000 - 1980	TWD13.90	TWD278.00
2000 +	TWD13.40	TWD268.00

* 參考價格

RS庫存編號:: 348-904
製造零件編號:: ISA220280C03LMDSXTMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type P, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8.4A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PG-TO252-3
	Series	ISA
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Width	5 mm
	Length	6.2mm
	Height	1.75mm
	Standards/Approvals	IEC61249‐2‐21, JEDEC
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type P, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8.4A
	Maximum Drain Source Voltage Vds 30V
	Package Type PG-TO252-3
	Series ISA
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Width 5 mm
	Length 6.2mm
	Height 1.75mm
	Standards/Approvals IEC61249‐2‐21, JEDEC
	Automotive Standard No

Datasheet - ISA220280C03LMDSXTMA1

COO (Country of Origin):: CN

The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.

100% avalanche tested

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249‑2‑21

Infineon ISA Type P, Type N-Channel MOSFET, 8.4 A, 30 V Enhancement, 3-Pin PG-TO252-3 ISA220280C03LMDSXTMA1

訂單超過 $1,300.00 免費送貨

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