Infineon OptiMOS Type P-Channel MOSFET, 6.5 A, 60 V Enhancement, 3-Pin PG-TO252-3 IPD25DP06NMATMA1
- RS庫存編號:
- 273-3005
- 製造零件編號:
- IPD25DP06NMATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 2500 件）*
TWD23,750.00
(不含稅)
TWD24,950.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月08日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 + | TWD9.50 | TWD23,750.00 |
* 參考價格
- RS庫存編號:
- 273-3005
- 製造零件編號:
- IPD25DP06NMATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 28W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10.6nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 28W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10.6nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | ||
Automotive Standard No | ||
The Infineon P-channel MOSFETs in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suit
Easy interface to MCU
Improved efficiency at low loads due to low Qg
Fast switching
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