Infineon OptiMOS Type P-Channel MOSFET, -16.4 A, 60 V Enhancement, 3-Pin PG-TO252-3
- RS庫存編號:
- 273-3012
- 製造零件編號:
- IPD900P06NMATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD125.00
(不含稅)
TWD131.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,420 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD12.50 | TWD125.00 |
| 50 - 90 | TWD12.10 | TWD121.00 |
| 100 - 240 | TWD11.70 | TWD117.00 |
| 250 - 990 | TWD11.50 | TWD115.00 |
| 1000 + | TWD11.30 | TWD113.00 |
* 參考價格
- RS庫存編號:
- 273-3012
- 製造零件編號:
- IPD900P06NMATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -16.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO252-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | -27nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -16.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO252-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs -27nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon P-channel MOSFETs in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in mediu
Easy interface to MCU
Fast switching
Avalanche ruggedness
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