Infineon OptiMOS Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin PG-TO252-3
- RS庫存編號:
- 273-2786
- 製造零件編號:
- IPD95R1K2P7ATMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD182.00
(不含稅)
TWD191.10
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 80 件從 2026年1月19日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD36.40 | TWD182.00 |
| 50 - 95 | TWD33.00 | TWD165.00 |
| 100 - 245 | TWD30.20 | TWD151.00 |
| 250 - 995 | TWD28.00 | TWD140.00 |
| 1000 + | TWD26.00 | TWD130.00 |
* 參考價格
- RS庫存編號:
- 273-2786
- 製造零件編號:
- IPD95R1K2P7ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | PG-TO252-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 52W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type PG-TO252-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 52W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is a 950V CoolMOS P7 SJ power device. The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best in class performance with state of the art ease of use. Enabling higher power density designs, BOM savings and lower assembly costs. It provides better production yield by reducing ESD related failures.
Less production issues
Fully optimized portfolio
Easy to drive and to parallel
Integrated Zener Diode ESD protection
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