Infineon OptiMOS Type N-Channel MOSFET, 73 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD040N03LF2SATMA1

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TWD305.00

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TWD320.20

(含稅)

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10 - 90TWD30.50TWD305.00
100 - 240TWD29.00TWD290.00
250 - 490TWD26.80TWD268.00
500 - 990TWD24.70TWD247.00
1000 +TWD23.80TWD238.00

* 參考價格

RS庫存編號:
349-430
製造零件編號:
IPD040N03LF2SATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

73A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.05mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

75W

Typical Gate Charge Qg @ Vgs

21nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 power MOSFET 30 V technology features a best in class RDS(on) of 4 mOhm in a DPAK package. This product addresses a broad range of applications from low to high switching frequency.

General purpose products

Excellent robustness

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards

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