Infineon OptiMOS Type N-Channel MOSFET, 137 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD023N03LF2SATMA1

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小計(1 包,共 10 件)*

TWD394.00

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TWD413.70

(含稅)

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  • 加上 1,990 件從 2026年6月08日 起發貨
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每單位
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10 - 90TWD39.40TWD394.00
100 - 240TWD37.40TWD374.00
250 - 490TWD34.70TWD347.00
500 - 990TWD31.90TWD319.00
1000 +TWD30.70TWD307.00

* 參考價格

RS庫存編號:
349-427
製造零件編號:
IPD023N03LF2SATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.35mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

39nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

107W

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon StrongIRFET 2 power MOSFET 30 V technology features a best in class RDS(on) of 2.3 mOhm in a DPAK package. This product addresses a broad range of applications from low to high switching frequency.

General purpose products

Excellent robustness

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards

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