Infineon SPD04P10PL G Type P-Channel MOSFET, -4.2 A, 100 V Enhancement, 3-Pin PG-TO252-3
- RS庫存編號:
- 273-7551
- 製造零件編號:
- SPD04P10PLGBTMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD213.00
(不含稅)
TWD223.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,490 件從 2026年2月23日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD21.30 | TWD213.00 |
| 50 - 90 | TWD21.00 | TWD210.00 |
| 100 - 240 | TWD19.40 | TWD194.00 |
| 250 - 990 | TWD18.00 | TWD180.00 |
| 1000 + | TWD17.70 | TWD177.00 |
* 參考價格
- RS庫存編號:
- 273-7551
- 製造零件編號:
- SPD04P10PLGBTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -4.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-TO252-3 | |
| Series | SPD04P10PL G | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.94V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Operating Temperature | 175°C | |
| Width | 40 mm | |
| Standards/Approvals | AEC Q101, RoHS | |
| Length | 40mm | |
| Height | 1.5mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -4.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-TO252-3 | ||
Series SPD04P10PL G | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.94V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Operating Temperature 175°C | ||
Width 40 mm | ||
Standards/Approvals AEC Q101, RoHS | ||
Length 40mm | ||
Height 1.5mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a qualified according to AEC Q101.
Logic level
RoHS compliant
Enhancement mode
Pb free lead plating
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