Infineon SPD04P10PL G Type P-Channel MOSFET, -4.2 A, 100 V Enhancement, 3-Pin PG-TO252-3
- RS庫存編號:
- 273-7551
- 製造零件編號:
- SPD04P10PLGBTMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD244.00
(不含稅)
TWD256.20
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD24.40 | TWD244.00 |
| 50 - 90 | TWD24.10 | TWD241.00 |
| 100 - 240 | TWD22.20 | TWD222.00 |
| 250 - 990 | TWD20.60 | TWD206.00 |
| 1000 + | TWD20.30 | TWD203.00 |
* 參考價格
- RS庫存編號:
- 273-7551
- 製造零件編號:
- SPD04P10PLGBTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -4.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-TO252-3 | |
| Series | SPD04P10PL G | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 38W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.94V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC Q101, RoHS | |
| Height | 1.5mm | |
| Length | 40mm | |
| Width | 40 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -4.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-TO252-3 | ||
Series SPD04P10PL G | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 38W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.94V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC Q101, RoHS | ||
Height 1.5mm | ||
Length 40mm | ||
Width 40 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a qualified according to AEC Q101.
Logic level
RoHS compliant
Enhancement mode
Pb free lead plating
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